Mainstream technology of next generation

Mainstream technology of next generation

  • International advanced and high-end production equipment

    Stable quality

    International advanced and high-end production equipment

  • Average efficiency of cell production line

    24.2%

    Average efficiency of cell production line

  • Various specifications of cell products

    Multi-spefications

    Various specifications of cell products

  • TUV , CGC and other institute certifications

    Product qualification

    TUV , CGC and other institute certifications

Hetero-junction solar cell projects

Hetero-junction solar cell projects

The hetero-junction cell production line project of JP-Solar was put into production in 2018. It adopts core equipment such as PECVD and PVD, which are the leading products of GS-SOLAR (China) and has become one of the major hetero-junction solar cell manufacturers in China.

So far, the company high efficient hetero-junction solar cell and module production line production capacity more than 1 GW, volume cell average conversional efficiency of 24.2%, mass production of high efficient hetero-junction solar module (60 cells) has reached 345W power, the product passed the international certification body, TUV third-party authority certification, detection and first class super leading technical certification from CGC.


HDT high efficiency heterojunction solar cell structure

HDT high efficiency heterojunction solar cell structure

Firstly, PECVD is used to deposit very thin intrinsic silicon passivation layer and P-type silicon doping layer on the back of N-type mono crystalline silicon wafer after texture formations on silicon surface.

Secondly, very thin intrinsic silicon passivation layer and N-type silicon doped layer are deposited on the front side of the silicon wafer. After the silicon film layer is deposited, transparent oxide conductive film (TCO) and metal lamination are deposited on both sides of the cell using PVD magnetron sputtering coating technology.

Finally, a double-sided metal electrode is prepared on a transparent conductive film by metal grating technology to form a final symmetrical multilayer laminated structure.


Excellent product characteristics

Excellent product characteristics

High conversion efficiency: HDT solar cells improves the conversion efficiency by 10%-20% compared with traditional crystal silicon cells

Low temperature coefficient: the cell power temperature coefficient is lower than -0.268%/ ºC.At high temperatures, power generation can be increased over 9 %

High stability: anti-PID effect, no LID effect, the attenuation rate of the first year is 50% lower than the traditional crystal silicon cell

Double side power generation: double side power generation; Backside power generation can gain 10%-20%


Innovations bring technological breakthroughs

Innovations bring technological breakthroughs

The adoption of high conductivity metallization process improves the conversion efficiency and reduces the cost of HDT solar cell.

HDT solar cell uses N-type monocrystalline silicon wafers so there is no LID and LeTID effect.

All the processes of HDT solar cell are carried out at low temperatures below 220ºC.

The structure of HDT solar cell is applicable on ultra-thin silicon wafers substrate therefore can realize flexibility in the future.


Superior products

Superior products

JP-SOLAR focusing on hetero-junction technology and product research and development, the company currently has 156.75mm, 158.75mm mass production of cell products, and has entered the research and development of 166mm large-size products.

158.57mm/9Busbars HDT solar cell

158.57mm/9Busbars HDT solar cell

Efficiency  contribution(%):23.4%-24.4%


Name

N-type monocrystalline silicon heterojunction  double-side solar cell
TypeHDT-C-S
Substrate MaterialN-type mono-crystalline silicon wafer
Size158.75mm×158.75mm±0.25mm
Thickness150μm±20μm
Front Side Electrode (-) 9Busbars/0.08mm width
Rear Side Electrode (+)9Busbars/0.08mm width


156.57mm/9Busbars HDT solar cell

156.57mm/9Busbars HDT solar cell

Efficiency  contribution(%):23.4%-24.4%


Name

N-type monocrystalline silicon heterojunction  double-side solar cell
TypeHDT-C-S
Substrate MaterialN-type mono-crystalline silicon wafer
Size156.75mm×156.75mm±0.25mm
Thickness150μm±20μm
Front Side Electrode (-) 9Busbars/0.08mm width
Rear Side Electrode (+)9Busbars/0.08mm width


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